The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jun. 06, 2005
Applicant:
Kwang Chul Joo, Kyungki-Do, KR;
Inventor:
Kwang Chul Joo, Kyungki-Do, KR;
Assignee:
Hynix Semiconductor Inc., Incheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8247 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a flash memory device, including the steps of forming a floating gate electrode that is a doped polysilicon film on a semiconductor substrate, forming a polysilicon layer in the pattern of HSG on the doped polysilicon film, conducting a nitrifying process after forming the HSG polysilicon layer, forming an AlOfilm on the resultant structure treated by the nitrifying process, and forming a control gate electrode on the AlOfilm.
Joo, Kwang. (2007). Method of manufacturing flash memory device (U.S. Patent No. 7157334). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7157334
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