The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jun. 29, 2004
Noh Yeal Kwak, Kyungki-Do, KR;
Noh Yeal Kwak, Kyungki-Do, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
Disclosed is a method for manufacturing a flash memory cell. A structure in which a floating gate, an ONO dielectric film and a control gate are stacked is formed by means of a gate mask process and an etch process. After a rapid thermal nitrification process is performed, a re-oxidization process is performed. Therefore, Si-dangling bonding broken during the gate etch process becomes a Si—N bonding structure by means of a rapid thermal nitrification process. As such, as abnormal oxidization occurring at the side of an ONO dielectric film during a re-oxidization process is prohibited, a smiling phenomenon of the ONO dielectric film is prevented.