The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Apr. 14, 2005
Toshio Ito, Tokyo, JP;
Toshio Ito, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of producing a ferroelectric capacitor includes the steps of: preparing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; laminating sequentially a metal layer, a first conductive layer, a ferroelectric layer, and a second conductive layer on the first insulating layer to form a capacitor forming laminated layer; forming an etching mask forming layer with strontium tantalate or strontium niobate; forming a silicon oxide layer on the etching mask forming layer for covering a ferroelectric capacitor forming area; forming an etching mask through wet etching of the etching mask forming layer with the silicon oxide layer; and forming a lamination formed of a barrier metal, a lower electrode, a ferroelectric layer, and an upper electrode through dry etching of the capacitor forming laminated layer with the etching mask.