The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jul. 13, 2004
Applicants:
Russell J. Hemley, Chevy Chase, MD (US);
Ho-kwang Mao, Washington, DC (US);
Chih-shiue Yan, Washington, DC (US);
Inventors:
Russell J. Hemley, Chevy Chase, MD (US);
Ho-Kwang Mao, Washington, DC (US);
Chih-shiue Yan, Washington, DC (US);
Assignee:
Carnegie Institution of Washington, Washington, DC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/04 (2006.01); C30B 25/00 (2006.01); C01B 31/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50–90 GPa and a fracture toughness of 11–20 MPa m. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000° C. to about 1100° C. such that the single crystal diamond has a fracture toughness of 11–20 MPa m.