The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jun. 19, 2004
Valerio Pruneri, San Donato Milanese, IT;
Federico Lucchi, San Donato Milanese, IT;
Paolo Vergani, San Donato Milanese, IT;
Valerio Pruneri, San Donato Milanese, IT;
Federico Lucchi, San Donato Milanese, IT;
Paolo Vergani, San Donato Milanese, IT;
Avanex Corporation, Fremont, CA (US);
Abstract
A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbOwith a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z− crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.