The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jan. 06, 2005
Zheng Chen, Colorado Springs, CO (US);
Carlos A. Paz DE Araujo, Colorado Springs, CO (US);
Larry D. Mcmillan, Colorado Springs, CO (US);
Zheng Chen, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Larry D. McMillan, Colorado Springs, CO (US);
Symetrix Corporation, Colorado Springs, CO (US);
Matushita Electric Industrial Co., Ltd, Osaka, JP;
Abstract
A device and method of reading a ferroelectric memory, including providing a ferroelectric memory including a ferroelectric memory cell, a charge integrator, and a bit line connecting the ferroelectric memory cell and the charge integrator. Pulses are applied to the ferroelectric memory cell, where each of the pulses are of a value lower than that which will destroy data stored in the memory cell. Output voltage values from the ferroelectric memory cell are accumulated by the charge integrator in response to each pulse. The output of the charge integrator may be read to determine whether the datum value stored in the memory cell is a logic high or low value. In one embodiment, the output of the charge integrator is read at a predetermined time after starting the pulses.