The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Mar. 22, 2002
Alexander Krasin, Moscow, RU;
Alexander Krasin, Moscow, RU;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A circuit providing protection against electrostatic discharge (ESD) for internal elements of an Integrated Circuit (IC). In one example, a protection circuit comprises a PMOSFET resistor (R) having a gate connected to a ground rail (VSS), a drain connected to an input node (ESD_RC) of an inverter (INV), a source and a bulk of the PMOSFET resistor (R) being connected to a power rail (VDD). The circuit also comprises an NMOSFET capacitor (C) having a gate connected to the input node (ESD_RC) of the inverter (INV), a drain, a source and a bulk of the NMOSFET capacitor (C) being connected to the ground rail (VSS). The circuit also includes a PMOSFET capacitor (C) having a gate connected to the input node (ESD_RC) of the inverter (INV). A drain and a source of the PMOSFET capacitor (C) being connected to the ground rail (VSS), and a bulk of the PMOSFET capacitor (C) is connected to the power rail (VDD).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile