The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Oct. 12, 2004
Masahiro Maeda, Osaka, JP;
Masahiro Maeda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitoris connected at one end to an upstream stage bias circuitvia a bonding wire B, and grounded at the other end. Also, a chip inductoris connected to a base electrode of a high-frequency signal amplification HBTvia a bonding wire B. In the high-frequency power amplifier of the present invention, the chip capacitorcauses noise generated within the upstream stage bias circuitto flow to the ground, thereby reducing noise in the reception band. Also, the chip inductorreduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.