The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jun. 09, 2004
Ching-hsun Chao, KaoHsiung, TW;
Jane-hway Liao, Hsin Chu Hsien, TW;
Jyh-rong Sheu, Hsin Chu, TW;
Yu-yang Chang, Tainan, TW;
Cheng-chung Lee, Taitung, TW;
Ching-Hsun Chao, KaoHsiung, TW;
Jane-Hway Liao, Hsin Chu Hsien, TW;
Jyh-Rong Sheu, Hsin Chu, TW;
Yu-Yang Chang, Tainan, TW;
Cheng-Chung Lee, Taitung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.