The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2006

Filed:

Feb. 02, 2001
Applicants:

Hsingya Arthur Wang, San Jose, CA (US);

Yuan Tang, San Jose, CA (US);

Haike Dong, San Ramon, CA (US);

Ming Sang Kwan, San Leandro, CA (US);

Peter Rabkin, Cupertino, CA (US);

Inventors:

Hsingya Arthur Wang, San Jose, CA (US);

Yuan Tang, San Jose, CA (US);

Haike Dong, San Ramon, CA (US);

Ming Sang Kwan, San Leandro, CA (US);

Peter Rabkin, Cupertino, CA (US);

Assignee:

Hyundai Electronics America, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash EEPROM array having a double-diffused source junction that can be used for source side programming. The flash EEPROM array, when programmed from the source side exhibits fast programming rates. Additionally, source side programming of arrays having different physical characteristics (e.g. transistor cell channel length) exhibit tighter program rate distributions than for the same arrays in which drain side programming is used.


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