The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2006

Filed:

Feb. 18, 2005
Applicants:

Tatsuya Kunisato, Takatsuki, JP;

Ryoji Hiroyama, Kyo-tanabe, JP;

Masayuki Hata, Kadoma, JP;

Kiyoshi Oota, Neyagawa, JP;

Inventors:

Tatsuya Kunisato, Takatsuki, JP;

Ryoji Hiroyama, Kyo-tanabe, JP;

Masayuki Hata, Kadoma, JP;

Kiyoshi Oota, Neyagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.


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