The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2006

Filed:

Oct. 03, 2005
Applicants:

Michael A. Nastasi, Sante Fe, NM (US);

Lin Shao, Los Alamos, NM (US);

N. David Theodore, Mesa, AZ (US);

Inventors:

Michael A. Nastasi, Sante Fe, NM (US);

Lin Shao, Los Alamos, NM (US);

N. David Theodore, Mesa, AZ (US);

Assignee:

Los Alamos National Security, LLC, Los Alamos, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.


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