The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jul. 16, 2002
Applicant:
Jean-pierre Joly, Saint Egreve, FR;
Inventor:
Jean-Pierre Joly, Saint Egreve, FR;
Assignee:
Commissariat A L'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing a MOS-type transistor includes providing a substrate comprising a thin layer of silicon (), integral with an insulating support (), and covered with a superficial layer () of a semi-conductor material, local etching of the superficial layer to expose the silicon layer in at least one channel region, formation of an insulated gate () above the silicon layer in the channel region, and formation of a source and a drain on either side of the channel region, the source and drain extending in the layer of silicon and in the superficial layer.