The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Sep. 25, 2002
Applicants:
Masashi Maekawa, Nara, JP;
Keiichi Fukuyama, Nara, JP;
Michinori Iwai, Yamatokooriyama, JP;
Kohei Tanaka, Tenri, JP;
Inventors:
Masashi Maekawa, Nara, JP;
Keiichi Fukuyama, Nara, JP;
Michinori Iwai, Yamatokooriyama, JP;
Kohei Tanaka, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.