The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Jan. 08, 2004
Steffen F. Schulze, Sherwood, OR (US);
Enio L. Carpi, Round Rock, TX (US);
Steffen F. Schulze, Sherwood, OR (US);
Enio L. Carpi, Round Rock, TX (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for repairing defects in a photolithographic mask for use in patterning semiconductor wafers introduces a pre-selected phase error selected to sum with a phase error of a defect repair material, yielding a desired composite phase error relative to light passing through the substrate alone, e.g., 180°. Substrate phase error may be introduced by modifying its thickness. For example, after any opaque layer material within a repair zone surrounding the defect is removed, the substrate, too, is removed within the repair zone to a pre-selected depth, forming a lacuna. Repair material is then deposited in the lacuna and in the remainder of the repair zone to a level substantially equal to the top surface of the opaque layer, yielding a desired, combined phase error and attenuation matching those of defect free regions of the mask where the opaque layer has not been removed.