The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2006

Filed:

Mar. 26, 2004
Applicants:

Masafumi Horiuchi, Kokubu, JP;

Katsuro Nakamata, Kokubu, JP;

Hiroshi Ninomiya, Kokubu, JP;

Yasuhiko Fukuoka, Kokubu, JP;

Satoru Iwasaki, Kokubu, JP;

Kenta Fukuyama, Kokubu, JP;

Inventors:

Masafumi Horiuchi, Kokubu, JP;

Katsuro Nakamata, Kokubu, JP;

Hiroshi Ninomiya, Kokubu, JP;

Yasuhiko Fukuoka, Kokubu, JP;

Satoru Iwasaki, Kokubu, JP;

Kenta Fukuyama, Kokubu, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/28 (2006.01); H04M 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-frequency module comprises: a diplexer connected to an antenna terminal for branching a plurality of transmission/reception systems different in pass band from one another; switch circuits for switching the transmission/reception systems to transmission systems and reception systems; power amplifiers for amplifying transmission signals in the pass bands of the transmission systems; and matching circuits for matching the impedances of the power amplifiers to one another. The power amplifiers and the switch circuits are respectively formed by high-frequency semiconductor integrated circuit elements, and these high-frequency semiconductor integrated circuit elements are mounted on the surface of the multi-layer substrate. The high-frequency module is reduced both in size and loss and increased in isolation in its entirety.


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