The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
May. 19, 2005
Tsuyoshi Tojo, Miyagai, JP;
Tomonori Hino, Kanagawa, JP;
Osamu Goto, Miyagi, JP;
Yoshifumi Yabuki, Miyagi, JP;
Shinichi Ansai, Miyagi, JP;
Shiro Uchida, Miyagi, JP;
Masao Ikeda, Miyagi, JP;
Tsuyoshi Tojo, Miyagai, JP;
Tomonori Hino, Kanagawa, JP;
Osamu Goto, Miyagi, JP;
Yoshifumi Yabuki, Miyagi, JP;
Shinichi Ansai, Miyagi, JP;
Shiro Uchida, Miyagi, JP;
Masao Ikeda, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Sony Shiroishi Semiconductor Inc., Miyagi, JP;
Abstract
A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device () is a GaN base multi-beam semiconductor laser device provided with four laser stripes (A,B,C andD) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (A toD) are provided with a p-type common electrode () on a mesa structure () which is formed on a sapphire substrate (), and have active regions (A,B,C andD) respectively. Two n-type electrodes (A andB) are provided on an n-type GaN contact layer () and located as common electrodes opposite to the p-type common electrode () on both sides of the mesa structure (). The distance A between the laser stripe (A) and the laser stripe (D) is no larger than 100 μm. The distance Bbetween the laser stripe (A) and the n-type electrode (B) is no larger than 150 μm while the distance Bbetween the laser stripe (D) and the n-type electrode (A) is no larger than 150 μm.