The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Jun. 12, 2002
Yoshihiko Furukawa, Anan, JP;
Makoto Shimada, Anan, JP;
Akiyoshi Kinouchi, Anan, JP;
Masanao Ochiai, Anan, JP;
Masayuki Senoh, Anan, JP;
Yoshihiko Furukawa, Anan, JP;
Makoto Shimada, Anan, JP;
Akiyoshi Kinouchi, Anan, JP;
Masanao Ochiai, Anan, JP;
Masayuki Senoh, Anan, JP;
Nichia Corporation, Tokushima, JP;
Abstract
A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.