The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Jun. 18, 2004
Jun Ho Seo, Kyungki-do, KR;
Jong Ho Jang, Kyungki-do, KR;
Jun Ho Seo, Kyungki-do, KR;
Jong Ho Jang, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile