The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Aug. 12, 2004
Yoshio Ozawa, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Kiyotaka Miyano, Fujisawa, JP;
Shigehiko Saida, Yokkaichi, JP;
Yoshio Ozawa, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Kiyotaka Miyano, Fujisawa, JP;
Shigehiko Saida, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.