The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2006

Filed:

Jun. 30, 2004
Applicant:

Kwang Chul Joo, Kyungki-Do, KR;

Inventor:

Kwang Chul Joo, Kyungki-Do, KR;

Assignee:

Hynix Semiconductor Inc., Kyungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a method for manufacturing a flash memory device which can minimize a hole current by impurity diffusion of floating gates, obtain a sufficient capacitance for a cell operation by increasing a breakdown voltage, and improve retention properties of a flash memory cell, by filing up an impurity on the interface between an oxide film and a polysilicon film, by forming the oxide film on the polysilicon film used as the floating gates, doping an impurity into the oxide film, and annealing the oxide film.


Find Patent Forward Citations

Joo, Kwang. (2006). Method for manufacturing flash memory device (U.S. Patent No. 7148109). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7148109

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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