The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Jun. 22, 2005
Tae Kyun Kim, Kyoungki-do, KR;
Tae Kyun Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed herein is a method of manufacturing a semiconductor device having a step gate, which can improve the refresh characteristics of the device. The method comprises the steps of: forming on a silicon substrate having active and field regions a first hard mask exposing the field region; etching the exposed field region to form a trench; forming an isolation film by filling an insulating film in the trench; forming a second hard mask exposing both sides of the active region by etching the first hard mask; forming a metal film on the resulting substrate including the second hard mask; forming a metal silicide film on both sides of the active region by annealing the resulting substrate; removing the metal film unreacted in the annealing step and the metal silicide film, thereby recessing both sides of the active region; removing the second hard mask; and forming a step gate on both edges of the central portion of the active region and the recessed portion of the active region, adjacent to each of the edges.