The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Dec. 13, 2002
Cherng Chyi Han, San Jose, CA (US);
Mao-min Chen, S.J., CA (US);
Jiun-ting Lee, Los Altos Hills, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Mao-Min Chen, S.J., CA (US);
Jiun-Ting Lee, Los Altos Hills, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A method for forming a planar GMR read-head having a narrow read gap, a narrow track-width and being well insulated from its lower shield. The method requires the formation of a planarized bottom magnetic shield in which concave regions, symmetrically disposed about a track-width region, are filled with a layer of dielectric to provide added insulation. The dielectric filled shield is planarized and an additional planar dielectric layer, a thin planar GMR sensor layer and a planar PMGI layer of uniform thickness is formed on it. A layer of photoresist is deposited on the PMGI layer and a bi-layer lift-off stencil of uniform height above the GMR layer and symmetric overhang regions is formed. The uniformity of the lift-off stencil, which is a result of the planarity of the layers on which it is formed, allows the deposition of conductive lead and biasing layers with controlled overspread.