The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2006

Filed:

Sep. 30, 2004
Applicants:

Osamu Nakagawara, Ritto, JP;

Masahiko Saeki, Shiga-ken, JP;

Kazuhiro Inoue, Moriyama, JP;

Inventors:

Osamu Nakagawara, Ritto, JP;

Masahiko Saeki, Shiga-ken, JP;

Kazuhiro Inoue, Moriyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04R 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a θ rotation Y-cut (θ=36° to 42°) LiTaOpiezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.


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