The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2006

Filed:

Aug. 22, 2003
Applicants:

Yoshihiro Tsuchiya, Tokyo, JP;

Satoru Araki, Tokyo, JP;

Masashi Sano, Tokyo, JP;

Inventors:

Yoshihiro Tsuchiya, Tokyo, JP;

Satoru Araki, Tokyo, JP;

Masashi Sano, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.


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