The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Aug. 24, 2001
Andrew T. Hunt, Atlanta, GA (US);
Mark G. Allen, Atlanta, GA (US);
David Kiesling, Atlanta, GA (US);
Robert E. Schwerzel, Alpharettal, GA (US);
Yongdong Jiang, Atlanta, GA (US);
Fe Alma Gladden, Duluth, GA (US);
John Wegman, Atlanta, GA (US);
Zhiyong Zhao, Atlanta, GA (US);
Matthew Scott Vinson, Atlanta, GA (US);
J. Eric Mcentyre, Atlanta, GA (US);
Scott Flanagan, Atlanta, GA (US);
Todd Polley, Atlanta, GA (US);
J. Stevenson Kenney, Atlanta, GA (US);
Andrew T. Hunt, Atlanta, GA (US);
Mark G. Allen, Atlanta, GA (US);
David Kiesling, Atlanta, GA (US);
Robert E. Schwerzel, Alpharettal, GA (US);
Yongdong Jiang, Atlanta, GA (US);
Fe Alma Gladden, Duluth, GA (US);
John Wegman, Atlanta, GA (US);
Zhiyong Zhao, Atlanta, GA (US);
Matthew Scott Vinson, Atlanta, GA (US);
J. Eric McEntyre, Atlanta, GA (US);
Scott Flanagan, Atlanta, GA (US);
Todd Polley, Atlanta, GA (US);
J. Stevenson Kenney, Atlanta, GA (US);
n Gimat Co., Atlanta, GA (US);
Abstract
Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.