The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Dec. 02, 2004
Ryujiro Saso, Tokyo, JP;
Mitsuhiko Kitagawa, Tokyo, JP;
Takashi Nishimura, Kanagawa, JP;
Yoshiaki Aizawa, Kanagawa, JP;
Ryujiro Saso, Tokyo, JP;
Mitsuhiko Kitagawa, Tokyo, JP;
Takashi Nishimura, Kanagawa, JP;
Yoshiaki Aizawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A field-effect transistor includes a silicon layer formed on an insulating film, a first-conductivity-type base and a second-conductivity-type source layers formed in the silicon layer being adjacent to each other, a second-conductivity-type drain layer formed in the silicon layer being separated from the source layer with the base layer being interposed therebetween, a gate-to-drain offset layer formed between the base and drain layers, having a resistance higher than that of the base layer, and a gate electrode formed on at least a surface of the base layer via a gate insulating film wherein the silicon layer in which the base layer is formed is a strained silicon layer.