The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Apr. 04, 2003
You-cheol Shin, Kyunggi-do, KR;
You-Cheol Shin, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A shallow trench isolation type semiconductor device is described, which includes a trench having a flexure in a bottom thereof. The flexure has a step difference of about 100 Å or more, and is preferably made at a middle area. Conventionally, a gate insulating layer includes a thin area of about 100 Å or less and a thick area of about 200 Å or more. On the basis of a bottom of a trench peripheral region, a middle part of the flexure may be concave or convex. Particularly, the foregoing device can effectively be applied to a self-aligned flash memory in which a width of a trench between one active region and another is about 3 micrometers or less.