The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7144772 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 05, 2006

Filed:

Aug. 28, 2003
Applicants:

Sung-yung Lee, Seoul, KR;

Nak-won Jang, Seoul, KR;

Heung-jin Joo, Gyeonggi-do, KR;

Inventors:

Sung-Yung Lee, Seoul, KR;

Nak-Won Jang, Seoul, KR;

Heung-Jin Joo, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.


Find Patent Forward Citations

Lee, Sung-Yung. (2006). Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same (U.S. Patent No. 7144772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7144772

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