The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2006

Filed:

Dec. 12, 2001
Applicants:

Ingrid Fritsch, Fayetteville, AR (US);

Charles Sherman Henry, Mississippi State, MS (US);

Benjamin P. Bowen, Tempe, AZ (US);

Walter R. Vandaveer, Lawrence, KS (US);

Nicole Bratcher, Pittsburg, OK (US);

Inventors:

Ingrid Fritsch, Fayetteville, AR (US);

Charles Sherman Henry, Mississippi State, MS (US);

Benjamin P. Bowen, Tempe, AZ (US);

Walter R. Vandaveer, Lawrence, KS (US);

Nicole Bratcher, Pittsburg, OK (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/31 (2006.01); G01N 27/327 (2006.01); G01N 27/333 (2006.01);
U.S. Cl.
CPC ...
Abstract

Microcavities and micropores that are microscopic (<1 mm) in width and depth and contain any number of individually-addressable electrodes, separated by insulators, along the walls of each cavity. The conducting materials, and the insulator materials can be deposited alternately onto a starting substrate, which is typically an oxidized silicon wafer or polyimide film, but may be any substrate that shows good adhesion to the materials layered on it. The cavities are etched through these layers, perpendicular to the plane of the substrate, exposing the layers at their edges. Pores may be carved entirely through the device.


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