The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Mar. 14, 2003
Victor Il'ich Kopp, Flushing, NY (US);
Azriel Zelig Genack, New York, NY (US);
Victor Il'ich Kopp, Flushing, NY (US);
Azriel Zelig Genack, New York, NY (US);
Chiral Photonics, Clifton, NJ (US);
Abstract
A chiral structure having an advantageous extended chiral defect that provides an enhanced energy distribution characteristic therein. This is accomplished by configuring a central portion of the chiral structure with a pitch different from the rest of the structure. This may be envisioned as a distributed chiral twist with a predefined angle over a portion of a chiral structure. With the distributed defect, the photonic stop band remains wide, allowing for the substantial increase in the lifetime of the mode in which lasing occurs, while the extent of the high intensity region of the mode is large. The extended chiral defect structure may also be implemented as a thin-film chiral structure, for example using cholesteric liquid crystal or sculptured thin films.