The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Apr. 02, 2004
Philippe Coronel, Barraux, FR;
Yves Morand, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
Robin Cerutti, Grenoble, FR;
Philippe Coronel, Barraux, FR;
Yves Morand, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
Robin Cerutti, Grenoble, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A MOS transistor formed in a silicon substrate comprising an active area surrounded with an insulating wall, a first conductive strip covering a central strip of the active area, one or several second conductive strips placed in the active area right above the first strip, and conductive regions placed in two recesses of the insulating wall and placed against the ends of the first and second strips, the silicon surfaces opposite to the conductive strips and regions being covered with an insulator forming a gate oxide.