The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Feb. 05, 2002
Osamu Nakamura, Kanagawa, JP;
Masayuki Kajiwara, Kanagawa, JP;
Junichi Koezuka, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hideaki Kuwabara, Kanagawa, JP;
Osamu Nakamura, Kanagawa, JP;
Masayuki Kajiwara, Kanagawa, JP;
Junichi Koezuka, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hideaki Kuwabara, Kanagawa, JP;
Abstract
The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or layer containing an inactive element, or rear gas element, in the channel region. As shown in FIG., a rear gas element is contained at least in an upper layer of the channel region.