The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Mar. 26, 2004
Lahir Shaik Adam, Plano, TX (US);
Eddie H. Breashears, Lucas, TX (US);
Alwin J. Tsao, Garland, TX (US);
Lahir Shaik Adam, Plano, TX (US);
Eddie H. Breashears, Lucas, TX (US);
Alwin J. Tsao, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a tri-gate lower power device and method for fabricating that tri-gate semiconductor device. The tri-gate device includes a first gate [located over a high voltage gate dielectric [within a high voltage region [, a second gate [located over a low voltage gate dielectric [within a low voltage core region [and a third gate [located over an intermediate core oxide [within an intermediate core region [. One method of fabrication includes forming a high voltage gate dielectric layer [over a semiconductor substrate [, implanting a low dose of nitrogen [] into the semiconductor substrate [in a low voltage core region [, and forming a core gate dielectric layer [over the low voltage core region [, including forming an intermediate core gate dielectric layer [over an intermediate core region [