The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Oct. 02, 2003
Taiji Noda, Osaka, JP;
Taiji Noda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Into a channel formation region of a semiconductor substrate of p-type silicon, indium ions are implanted at an implantation energy of about 70 keV and a dose of about 5×10/cm, thereby forming a p-doped channel layer. Next, germanium ions are implanted into the upper portion of the semiconductor substrate at an implantation energy of about 250 keV and a dose of about 1×10/cm, thereby forming an amorphous layer in a region of the semiconductor substrate deeper than the p-doped channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile