The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Jan. 20, 2004
Akira Hokazono, Sagamihara, JP;
Kazuya Ohuchi, Yokohama, JP;
Akira Hokazono, Sagamihara, JP;
Kazuya Ohuchi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a p-type well region, n-type diffusion regions formed in the surface region of the p-type well region, a gate electrode containing silicon and formed above the p-type well region with a gate insulating film disposed therebetween, and NiSi films formed in the surface regions of the n-type diffusion regions. In the semiconductor device, p-type impurity is doped in the depth direction from the surface of the NiSi film and the impurity profile of p-type impurity is so formed that a peak concentration of not lower than 1E20 cmwill be provided in a preset depth position of the NiSi film and the concentration in the interface between the NiSi film and the n-type diffusion region and the concentration in a position deeper than the interface will not be higher than 5E19 cm.