The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Oct. 13, 2004
Motoyuki Sato, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Katsuyuki Sekine, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Motoyuki Sato, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Katsuyuki Sekine, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.