The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Jun. 22, 2004
Fumio Koyama, Yokohama, JP;
Nobuaki Ueki, Ebina, JP;
Fumio Koyama, Yokohama, JP;
Nobuaki Ueki, Ebina, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Fumio Koyama c/o Tokyo Institute of Technology, Yokohama, JP;
Abstract
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser. Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 μm square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 μm square away from the one hole to produce four light emitting spots.