The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Feb. 24, 2005
Kunihiko Sekido, Numazu, JP;
Hideaki Nagasaka, Sunto-gun, JP;
Michiyo Sekiya, Mishima, JP;
Nobumichi Miki, Suntoh-gun, JP;
Yosuke Morikawa, Yokohama, JP;
Kunihiko Sekido, Numazu, JP;
Hideaki Nagasaka, Sunto-gun, JP;
Michiyo Sekiya, Mishima, JP;
Nobumichi Miki, Suntoh-gun, JP;
Yosuke Morikawa, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An electrophotographic photosensitive member superior in dot reproducibility and a process cartridge and an process cartridge having the electrophotographic photosensitive member are provided. Where in a light attenuation curve drawn in a way in which the surface of the electrophotographic photosensitive member is so charged that intensity of an electric field is 15 (V/μm) to establish the surface potential of the electrophotographic photosensitive member into a given value E(V) and then exposed to light under conditions that the electrophotographic photosensitive member has a surface potential of 0.8 E(V) at a time point T(ms) passes after exposure starts, the inclination of the light attenuation curve at a time point T(ms) passes after exposure starts is represented by m, and in a dark-time surface potential attenuation curve drawn in a way in which the surface of the electrophotographic photosensitive member is charged under conditions that the electrophotographic photosensitive member has a surface potential of 0.8 E(V) at a time point T(ms) passes after charging is finished and thereafter no exposure is performed, the inclination of the dark-time surface potential attenuation curve at a time point T(ms) passes after charging is finished is represented by m', the m and m′ satisfy |m−m′|≦0.020, provided that T=[{d/(μ×E)}×100]×10, where d is the layer thickness (μm) of the charge transport layer and μ is the drift mobility [cm/(V·s)] of the charge transport layer.