The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Jan. 27, 2005
Tetsuya Norikane, Imabari, JP;
Hiroaki Hoshikawa, Niihama, JP;
Tetsuya Norikane, Imabari, JP;
Hiroaki Hoshikawa, Niihama, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method of fixing a seed crystal to be used for growing a silicon carbide single crystal from the seed crystal that has been fixed to a graphite base, wherein the method includes: forming a layered product by placing a metallic material whose melting point is not higher than growth temperature of the single crystal on the graphite base, disposing the seed crystal on the metallic material, and then further placing a pressing member for imposing a load on the seed crystal thereon; heat-treating the layered product at a temperature to fix the graphite base, the metallic material, and the seed crystal to each other to form one body, with the temperature being not lower than the melting point of the metallic material but not higher than the growth temperature of the single crystal; cooling the layered product; and then removing the pressing member from the layered product. The present invention provides a method of fixing a seed crystal to be used for growing a silicon carbide single crystal that inhibits the development of macroscopic defects to extend in a grown single crystal by bonding the seed crystal and a graphite base for holding the seed crystal to each other with a metal carbide layer including no voids. The present invention also provides a method of manufacturing a single crystal using the fixing method.