The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Nov. 23, 2004
Kouji Makita, Akou, JP;
Kenji Yoshikawa, Bizen, JP;
Takayuki Kashima, Bizen, JP;
Hideto Adachi, Okayama, JP;
Kouji Makita, Akou, JP;
Kenji Yoshikawa, Bizen, JP;
Takayuki Kashima, Bizen, JP;
Hideto Adachi, Okayama, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate; an n-type AlGaInP cladding layerformed on the n-type GaAs substrate; a non-doped quantum well active layer; a p-type AlGaInP first cladding layer; a p-type GaInP etching stop layer; a p-type AlGaInP second cladding layer; a p-type GaInP cap layer; a p-type GaAs contact layer; and an n-type AlInP block layer. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layeris formed on the ridge portion only.