The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
May. 20, 2004
Nobuaki Matsuoka, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Nobuaki Matsuoka, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor storage device is provided, which comprises a memory array comprising memory elements, a write state machine for applying a first voltage for performing a write or erase operation, with respect to one of the memory elements, to the memory element via a bit line connected thereto, and thereafter, applying a second voltage for verifying whether or not the write or erase operation has been performed, to the memory element via the bit line, and a reset portion for grounding the bit line connected to the memory element after the write state machine has applied the first voltage and before the write state machine has applied the second voltage. Each memory element comprises a gate electrode, a channel region, diffusion regions, and memory function sections provided on opposite sides of the gate electrode and having a function of retaining charges.