The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2006

Filed:

Mar. 29, 2004
Applicants:

Ming-dou Ker, Hsinchu, TW;

Chyh-yih Chang, Hsinchu, TW;

Chun-lin Hou, Hsinchu, TW;

Inventors:

Ming-Dou Ker, Hsinchu, TW;

Chyh-Yih Chang, Hsinchu, TW;

Chun-Lin Hou, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/60 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system for measuring electrostatic discharge (ESD) characteristics of a semiconductor device that comprises at least one pulse generator generating ESD-scale pulses, a first point of the semiconductor device receiving a first ESD-scale pulse from the at least one pulse generator, a second point of the semiconductor device receiving the first ESD-scale pulse from the at least one pulse generator, at least a third point of the semiconductor device receiving a second ESD-scale pulse from the at least one pulse generator, and a data collector to collect data on the ESD characteristics of the semiconductor device.


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