The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Dec. 17, 2004
Yasuyuki Tamura, Ibaraki, JP;
Takaoki Sasaki, Yamagata, JP;
Yasuyuki Tamura, Ibaraki, JP;
Takaoki Sasaki, Yamagata, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high in the vicinity of an interface with the silicon substrate and progressively decreases with decreasing distance from the gate electrode. The nitrogen concentration is high in the vicinity of an interface with the gate electrode and progressively decreases with decreasing distance from the silicon substrate. The fluorine concentration in the vicinity of the interface with the silicon substrate is preferably 1×10cmor more. The nitrogen concentration in the vicinity of the interface with the gate electrode is preferably 1×10cmor more.