The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Jul. 21, 2003
Zhijian Xie, Allentown, PA (US);
Shuming Xu, Schnecksville, PA (US);
Zhijian Xie, Allentown, PA (US);
Shuming Xu, Schnecksville, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
An MOS device is formed comprising a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. The MOS device further comprises a gate formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, and a shielding structure formed proximate the upper surface of the semiconductor layer and between the gate and the second source/drain region, the shielding structure being electrically connected to the first source/drain region, the shielding structure being spaced laterally from the gate and being non-overlapping relative to the gate. In this manner, the MOS device is substantially compatible with a CMOS process technology.