The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Dec. 27, 2002
Toshihide Kamata, Tsukuba, JP;
Manabu Yoshida, Tsukuba, JP;
Toshihide Kamata, Tsukuba, JP;
Manabu Yoshida, Tsukuba, JP;
Abstract
A thin-film transistor includes a substrate (), a gate electrode () provided on a portion of the substrate, an insulation layer () arranged to cover the gate electrode and the substrate, a source or drain () provided on the insulation layer in a region corresponding to a region of the gate electrode, a semiconductor layer () arranged to cover the source or drain () and the insulation layer, a drain or source () provided on the semiconductor in a portion of a region corresponding to a region of the source or drain () that overlaps with the gate electrode, and a channel () formed between the source or drain () and the drain or source () and having a length defined by a film thickness of the semiconductor layer ().