The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
May. 03, 2006
Takayoshi Minami, Kawasaki, JP;
Yuji Setta, Kawasaki, JP;
Takayoshi Minami, Kawasaki, JP;
Yuji Setta, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises a gate interconnectionincluding a gate electrode formed over a semiconductor substratewith a gate insulation filmformed therebetween; a first source/drain diffused layerformed near the end of the gate interconnection; a second source/drain diffused layerformed remote from the gate interconnectionand the first source/drain diffused layer; and an insulation filmformed over the gate interconnection, the first source/drain diffused layerand the second source/drain diffused layer, and having a groove-shaped openingformed in, which integrally exposes the gate interconnection, one of the first source/drain diffused layer, and one of the second source/drain diffused layer; and a contact layerburied in the groove-shaped opening. The groove-shaped openingsfor the contact layersto be buried in can be formed without failure. Accordingly, it is possible to provide a semiconductor device which can realize the micronization without reliability decrease and fabrication yield decrease.