The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2006

Filed:

Dec. 17, 2002
Applicants:

Sung Koo Lee, Seoul, KR;

Jae Chang Jung, Seoul, KR;

Geun Su Lee, Ichon-shi, KR;

Ki Soo Shin, Sungnam-shi, KR;

Inventors:

Sung Koo Lee, Seoul, KR;

Jae Chang Jung, Seoul, KR;

Geun Su Lee, Ichon-shi, KR;

Ki Soo Shin, Sungnam-shi, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.


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