The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Nov. 10, 2004
Kwang-ki Choi, Gyeonggi-do, KR;
Kwang-ki Choi, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes an n-type compound semiconductor layer; a resonant layer stacked on a predetermined region of the n-type compound semiconductor layer; a p-type compound semiconductor layer formed on the resonant layer; electrodes respectively formed on each of the p-type and n-type compound semiconductor layers; a bonding metal film stacked on the electrodes; and a high reflection film stacked on the other surface of the resonant layer facing a surface through which a laser generated from the resonant layer is emitted, wherein the thickness of the bonding metal film is greater than that of the high reflection film.