The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jul. 11, 2003
Takashi Nishikawa, Nara, JP;
Takashi Ohtsuka, Toyonaka, JP;
Takashi Nishikawa, Nara, JP;
Takashi Ohtsuka, Toyonaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
This specification relates to a semiconductor device that comprises a semiconductor substrate, a source regionand a drain region, which are formed on the semiconductor substratewith a channel regiontherebetween; a floating gate electrodethat is formed on the channel regionwith a gate insulator filmtherebetween; a ferroelectric filmthat is formed on the floating gate electrode; and a control gate electrodethat is formed on the ferroelectric film, wherein intermediate insulator filmsandare formed between at least one of the pairs consisting of the floating gate electrodeand the ferroelectric film, and the ferroelectric filmand the control gate electrode, and the intermediate insulator filmsandare made of hafnium oxide that contains nitrogen atoms.